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MITSUBISHI SEMICONDUCTOR MITSUBISHI SEMICONDUCTOR
PS21865/-A PS21865/-A
TRANSFER-MOLD TYPE TRANSFER-MOLD TYPE INSULATED TYPE INSULATED TYPE
PS21865
INTEGRATED POWER FUNCTIONS
600V/20A low-loss 5th generation IGBT inverter bridge for 3 phase DC-to-AC power conversion
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
* * * * * For upper-leg IGBTS : Drive circuit, High voltage isolated high-speed level shifting, Control supply under-voltage (UV) protection. For lower-leg IGBTS : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC). (Fig.3) Fault signaling : Corresponding to an SC fault (Lower-side IGBT) or a UV fault (Lower-side supply). Input interface : 5V line CMOS/TTL compatible. (High Active) UL Approved : Yellow Card No. E80276
APPLICATION AC100V~200V three-phase inverter drive for small power motor control.
Fig. 1 PACKAGE OUTLINES
Dimensions in mm
TERMINAL CODE 27x2.8(=75.6) 2.8 (8.5) (2.4) (14.4) (2.5) (17.6) (2.4)
12 27 34 28 29 56 30 78 31 32 9 10 11 12 13 33 34 14 15 16 17 18 19 20 21 35 36
0.3
C
(1)
(4.5)
(3.1)
Heat sink side (2.2)
(3.5) (4.65)
Type name , Lot No.
41
34.90.5
310.5
2-f4.50.2
(2.9)
37 38 39
(4.65) (10)
40
13.40.5
(1.5)
1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13.
UP VP1 VUFB VUFS VP VP1 VVFB VVFS WP VP1 VPC VWFB VWFS
14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. 26.
VN1 VNC CIN CFO FO UN VN WN P U V W N
21.40.5 (11) (10)
22
23
24
25
26
11.50.5
(0.6) (2)
(3.5)
DUMMY TERMINAL CODE 27. 28. 29. 30. 31. 32. 33. 34. VPC UPG P VPC VPG U WPG V 35. 36. 37. 38. 39. 40. 41. UNG VNC VNO WNG VNG W P
(1.5)
Irregular solder remains 0.5MAX Irregular solder remains 0.5MAX
8.50.3 100.3 100.3 100.3 670.3 790.5 A
200.3
(0.6) (2)
3.80.2
1.90.05 10.2
1.60.5
1.70.05 0.80.2
1.60.5
B
12.80.5 (16.0)0.5
70.5
3.25MAX
1.85MAX Detail : B (t=0.7) Detail : C
Detail : A
(t=0.7)
Heat sink side
-A : Long terminal type (16.0mm)
(0~5)
Jul. 2003
MITSUBISHI SEMICONDUCTOR
PS21865/-A
TRANSFER-MOLD TYPE INSULATED TYPE
Fig. 2 INTERNAL FUNCTIONS BLOCK DIAGRAM (TYPICAL APPLICATION EXAMPLE)
CBW+ CBW- CBV+ CBV- CBU- CBU+
C1 : Tight tolerance, temp-compensated electrolytic type (Note : The capacitance value depends on the PWM control scheme used in the applied system). C2 : 0.22~2F R-category ceramic capacitor for noise filtering.
High-side input (PWM) (5V line) (Note 1,2)
Input signal Input signal Input signal conditioning conditioning conditioning Level shifter Level shifter Level shifter
Protection circuit (UV) Protection circuit (UV) Protection circuit (UV)
C2 C1
(Note 6)
DIP-IPM
Inrush current limiter circuit
P
Drive circuit Drive circuit Drive circuit
AC line input
H-side IGBTS
(Note 4)
U V W
M
AC line output
C Z
Fig. 3
N1
VNC
N CIN
L-side IGBTS Drive circuit
Z : ZNR (Surge absorber) C : AC filter (Ceramic capacitor 2.2~6.5nF) (Note : Additionally, an appropriate line-to line surge absorber circuit may become necessary depending on the application environment).
Input signal conditioning
Fo logic
Protection circuit
Control supply Under-Voltage protection
FO CFO Low-side input (PWM) (5V line) (Note 1, 2) Fault output (5V line) (Note 3, 5)
VNC VD (15V line)
Note1: 2: 3: 4:
5: 6:
Input logic is high-active. There is a 2.5k (min) pull-down resistor built-in each input circuit. When using an external CR filter, please make it satisfy the input threshold voltage. By virtue of integrating an application specific type HVIC inside the module, direct coupling to CPU terminals without any opto-coupler or transformer isolation is possible. (see also Fig. 8) This output is open collector type. The signal line should be pulled up to the positive side of the 5V power supply with approximately 10k resistance. (see also Fig. 8) The wiring between the power DC link capacitor and the PN1 terminals should be as short as possible to protect the DIP-IPM against catastrophic high surge voltages. For extra precaution, a small film type snubber capacitor (0.1~0.22F, high voltage type) is recommended to be mounted close to these PN1 DC power input pins. Fo output pulse width should be decided by putting external capacitor between CFO and VNC terminals. (Example : CFO=22nF tFO=1.8ms (Typ.)) High voltage (600V or more) and fast recovery type (less than 100ns) diodes should be used in the bootstrap circuit.
Fig. 3 EXTERNAL PART OF THE DIP-IPM PROTECTION CIRCUIT
DIP-IPM
Drive circuit
P
Short Circuit Protective Function (SC) : SC protection is achieved by sensing the L-side DC-Bus current (through the external shunt resistor) after allowing a suitable filtering time (defined by the RC circuit). When the sensed shunt voltage exceeds the SC trip-level, all the L-side IGBTs are turned OFF and a fault signal (Fo) is output. Since the SC fault may be repetitive, it is recommended to stop the system when the Fo signal is received and check the fault.
IC (A)
SC Protection Trip Level
H-side IGBTS
U V W
L-side IGBTS
External protection circuit N1
Shunt Resistor (Note 1)
A
N VNC CIN B
Drive circuit
Collector current waveform
CR
C
Protection circuit
(Note 2)
0 2 tw (s)
Note1: In the recommended external protection circuit, please select the RC time constant in the range 1.5~2.0s. 2: To prevent erroneous protection operation, the wiring of A, B, C should be as short as possible.
Jul. 2003
MITSUBISHI SEMICONDUCTOR
PS21865/-A
TRANSFER-MOLD TYPE INSULATED TYPE
MAXIMUM RATINGS (Tj = 25C, unless otherwise noted) INVERTER PART
Symbol VCC VCC(surge) VCES IC ICP PC Tj Parameter Supply voltage Supply voltage (surge) Collector-emitter voltage Each IGBT collector current Each IGBT collector current (peak) Collector dissipation Junction temperature Condition Applied between P-N Applied between P-N Tf = 25C Tf = 25C, less than 1ms Tf = 25C, per 1 chip (Note 1) Ratings 450 500 600 20 40 52.6 -20~+125 Unit V V V A A W C
Note 1 : The maximum junction temperature rating of the power chips integrated within the DIP-IPM is 150C (@ Tf 100C) however, to ensure safe operation of the DIP-IPM, the average junction temperature should be limited to Tj(ave) 125C (@ Tf 100C).
CONTROL (PROTECTION) PART
Symbol VD VDB VIN VFO IFO VSC Parameter Control supply voltage Control supply voltage Input voltage Fault output supply voltage Fault output current Current sensing input voltage Condition Applied between VP1-VPC, VN1-VNC Applied between VUFB-VUFS, VVFB-VVFS, VWFB-VWFS Applied between UP, VP, WP-VPC, UN, VN, WN-VNC Applied between FO-VNC Sink current at FO terminal Applied between CIN-VNC Ratings 20 20 -0.5~VD+0.5 -0.5~VD+0.5 1 -0.5~VD+0.5 Unit V V V V mA V
TOTAL SYSTEM
Parameter VCC(PROT) Self protection supply voltage limit (short circuit protection capability) Module case operation temperature Tf Tstg Storage temperature Viso Isolation voltage Symbol Condition VD = 13.5~16.5V, Inverter part Tj = 125C, non-repetitive, less than 2 s (Note 2) 60Hz, Sinusoidal, AC 1 minute, connection pins to heat-sink plate Ratings 400 -20~+100 -40~+125 2500 Unit V C C Vrms
Note 2 : Tf MEASUREMENT POINT
Al Board Specification : Dimensions : 10010010mm, Finishing : 12s, Warp : -50~100m
Control Terminals Groove DIP-IPM
18mm 13.5mm P U V W N
AI board
Power Terminals FWDi Chip
IGBT Chip Temp. measurement point (inside the AI board)
Temp. measurement point (inside the AI board)
Silicon-grease should be applied evenly with a thickness of 100~200m
Jul. 2003
MITSUBISHI SEMICONDUCTOR
PS21865/-A
TRANSFER-MOLD TYPE INSULATED TYPE
THERMAL RESISTANCE
Symbol Rth(j-f)Q Rth(j-f)F Parameter Junction to case thermal resistance (Note 3) Condition Inverter IGBT part (per 1/6 module) Inverter FWDi part (per 1/6 module) Min. -- -- Limits Typ. -- -- Max. 1.90 3.00 Unit C/W C/W
Note 3: Grease with good thermal conductivity should be applied evenly with about +100m~+200m on the contacting surface of DIP-IPM and heat-sink.
ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise noted) INVERTER PART
Symbol VCE(sat) VEC ton trr tc(on) toff tc(off) ICES Parameter Collector-emitter saturation voltage FWDi forward voltage Condition IC = 20A, Tj = 25C VD = VDB = 15V VIN = 5V IC = 20A, Tj = 125C Tj = 25C, -IC = 20A, VIN = 0V VCC = 300V, VD = VDB = 15V IC = 20A, Tj = 125C, VIN = 0 5V Inductive load (upper-lower arm) Tj = 25C Tj = 125C Min. -- -- -- 0.70 -- -- -- -- -- -- Limits Typ. 1.60 1.70 1.50 1.30 0.30 0.40 1.60 0.50 -- -- Max. 2.10 2.20 2.00 1.90 -- 0.60 2.20 0.80 1 10 Unit V V s s s s s mA
Switching times
Collector-emitter cut-off current
VCE = VCES
CONTROL (PROTECTION) PART
Symbol Parameter Condition Total of VP1-VPC, VN1-VNC VD = VDB = 15V VIN = 5V VUFB-VUFS, VVFB-VVFS, VWFB-VWFS VD = VDB = 15V Total of VP1-VPC, VN1-VNC VIN = 0V VUFB-VUFS, VVFB-VVFS, VWFB-VWFS VSC = 0V, FO circuit pull-up to 5V with 10k VSC = 1V, IFO = 1mA Tj = 25C, VD = 15V (Note 4) VIN = 5V Trip level Reset level Tj 125C Trip level Reset level CFO = 22nF (Note 5) Min. -- -- -- -- 4.9 -- 0.43 1.0 10.0 10.5 10.3 10.8 1.0 2.1 0.8 Limits Typ. -- -- -- -- -- -- 0.48 1.5 -- -- -- -- 1.8 2.3 1.4 Max. 5.00 0.40 7.00 0.55 -- 0.95 0.53 2.0 12.0 12.5 12.5 13.0 -- 2.6 2.1 Unit mA mA mA mA V V V mA V V V V ms V V
ID
Circuit current
VFOH Fault output voltage VFOL Short circuit trip level VSC(ref) Input current IIN UVDBt Supply circuit under-voltage UVDBr protection UVDt UVDr Fault output pulse width tFO ON threshold voltage Vth(on) Applied between UP, VP, WP-VPC, UN, VN, WN-VNC OFF threshold voltage Vth(off) Note 4 : Short circuit protection is functioning only at the low-arms. Please select the value of the external shunt resistor such that the SC triplevel is less than 34 A. 5 : Fault signal is output when the low-arms short circuit or control supply under-voltage protective functions operate. The fault output pulsewidth tFO depends on the capacitance value of CFO according to the following approximate equation : CFO = 12.2 10-6 tFO [F].
Jul. 2003
MITSUBISHI SEMICONDUCTOR
PS21865/-A
TRANSFER-MOLD TYPE INSULATED TYPE
MECHANICAL CHARACTERISTICS AND RATINGS
Parameter Mounting torque Weight Heat-sink flatness Mounting screw : M4 Condition Recommended 1.18 N*m (Note 6) Min. 0.98 -- -50 Limits Typ. -- 65 -- Max. 1.47 -- 100 Unit N*m g m
Note 6: Measurement point of heat-sink flatness
+-
Measurement location
3mm
Heat-sink side
- +
Heat-sink side
RECOMMENDED OPERATION CONDITIONS
Symbol VCC VD VDB VD, VDB tdead fPWM Parameter Supply voltage Control supply voltage Control supply voltage Control supply variation Arm shoot-through blocking time PWM input frequency Condition Applied between P-N Applied between VP1-VPC, VN1-VNC Applied between VUFB-VUFS, VVFB-VVFS, VWFB-VWFS Min. 0 13.5 13.0 -1 2 -- -- (Note 7) (Note 8) 300 -5.0 Limits Typ. 300 15.0 15.0 -- -- 5 -- -- -- Max. 400 16.5 18.5 1 -- -- 12 -- 5.0 Unit V V V V/s s kHz Arms ns V
For each input signal, Tf 100C Tf 100C, Tj 125C VCC = 300V, VD = 15V, fc = 10kHz Allowable r.m.s. current IO P.F = 0.8, sinusoidal Tj 125C, Tf 100C PWIN ON Minimum input pulse width VNC between VNC-N (including surge) VNC variation Note 7 : The allowable r.m.s. current value depends on the actual application conditions. 8 : The input pulse width less than PWIN might make no response.
Jul. 2003
MITSUBISHI SEMICONDUCTOR
PS21865/-A
TRANSFER-MOLD TYPE INSULATED TYPE
Fig. 4 THE DIP-IPM INTERNAL CIRCUIT
VUFB VUFS VP1 UP
HVIC1
VCC VB HO VS
DIP-IPM
P IGBT1 Di1
IN COM
U
VVFB VVFS VP1 VP
HVIC2
VCC VB HO VS
IGBT2
Di2
IN COM
V
VWFB VWFS VP1 WP VPC
HVIC3
VCC VB HO VS
IGBT3
Di3
IN COM
W IGBT4 Di4
LVIC
UOUT
VN1
VCC
IGBT5
VOUT
Di5
UN VN WN
Fo
UN VN WN Fo GND VNO CIN WOUT
IGBT6
Di6
VNC
CFO
N
CFO
CIN
Jul. 2003
MITSUBISHI SEMICONDUCTOR
PS21865/-A
TRANSFER-MOLD TYPE INSULATED TYPE
Fig. 5 TIMING CHARTS OF THE DIP-IPM PROTECTIVE FUNCTIONS [A] Short-Circuit Protection (Lower-arms only)
(With the external shunt resistance and CR connection) a1. Normal operation : IGBT ON and carrying current. a2. Short circuit current detection (SC trigger). a3. Hard IGBT gate interrupt. a4. IGBT turns OFF. a5. FO timer operation starts : The pulse width of the FO signal is set by the external capacitor CFO. a6. Input "L" : IGBT OFF state. a7. Input "H" : IGBT ON state, but during the FO active signal period the IGBT doesn't turn ON. a8. IGBT OFF state.
Lower-arms control input Protection circuit state SET
a6 a7
RESET
Internal IGBT gate a2 a1 Output current Ic Sense voltage of the shunt resistance SC
a3
a4 a8 SC reference voltage
CR circuit time constant DELAY Error output Fo a5
[B] Under-Voltage Protection (Lower-arm, UVD)
b1. Control supply voltage rises : After the voltage level reaches UVDr, the circuits start to operate when next input is applied. b2. Normal operation : IGBT ON and carrying current. b3. Under voltage trip (UVDt). b4. IGBT OFF in spite of control input condition. b5. FO operation starts. b6. Under voltage reset (UVDr). b7. Normal operation : IGBT ON and carrying current.
Control input
Protection circuit state UVDr
RESET
SET
RESET b6
Control supply voltage VD
b1
UVDt
b3 b4
b2 Output current Ic
b7
Error output Fo
b5
Jul. 2003
MITSUBISHI SEMICONDUCTOR
PS21865/-A
TRANSFER-MOLD TYPE INSULATED TYPE
[C] Under-Voltage Protection (Upper-arm, UVDB)
c1. Control supply voltage rises : After the voltage reaches UVDBr, the circuits start to operate when next input is applied. c2. Normal operation : IGBT ON and carrying current. c3. Under voltage trip (UVDBt). c4. IGBT OFF in spite of control input condition, but there is no FO signal output. c5. Under voltage reset (UVDBr). c6. Normal operation : IGBT ON and carrying current.
Control input
Protection circuit state UVDBr Control supply voltage VDB
RESET
SET
RESET
c1
UVDBt
c5 c3 c4 c6
c2 Output current Ic High-level (no fault output) Error output Fo
Fig. 6 RECOMMENDED CPU I/O INTERFACE CIRCUIT
5V line
10k
DIP-IPM
UP,VP,WP,UN,VN,WN
CPU
Fo VNC(Logic)
Note : RC coupling at each input (parts shown dotted) may change depending on the PWM control scheme used in the application and the wiring impedance of the application's printed circuit board. The DIP-IPM input signal section integrates a 2.5k(min) pull-down resistor. Therefore, when using a external filtering resistor, care must be taken to satisfy the turn-on threshold voltage requirement.
2.5k (min)
Fig. 7 RECOMMENDED WIRING OF SHUNT RESISTANCE
Wiring inductance should be less than 10nH.
DIP-IPM
width=3mm, thickness=100m, length=17mm in copper pattern (rough standard)
Shunt resistor
VNC
N
Please make the connection point as close as possible to the terminal of shunt resistor.
Jul. 2003
MITSUBISHI SEMICONDUCTOR
PS21865/-A
TRANSFER-MOLD TYPE INSULATED TYPE
Fig. 8 TYPICAL DIP-IPM APPLICATION CIRCUIT EXAMPLE
C1:Tight tolerance temp-compensated electrolytic type C2,C3: 0.22~2F R-category ceramic capacitor for noise filtering. (Note: The capacitance value depends on the PWM control used in the applied system.)
C2 C1
VUFB VUFS VP1 HVIC1
VCC VB HO VS
DIP-IPM
P
C3
UP
IN COM
U
C2 C1
VVFB VVFS VP1 HVIC2
VCC IN COM VB HO VS
C3
VP V
C2 C1
VWFB VWFS VP1 HVIC3
VCC VB HO VS
M
C3
Note 1 : To prevent the input signals oscillation, the wiring of each input should be as short as possible. (Less than 2cm) 2 : By virtue of integrating an application specific type HVIC inside the module, direct coupling to CPU terminals without any opto-coupler or transformer isolation is possible. 3 : FO output is open collector type. This signal line should be pulled up to the positive side of the 5V power supply with approximately 10k resistor. 4 : FO output pulse width is determined by the external capacitor between CFO and VNC terminals (CFO). (Example : CFO = 22 nF tFO = 1.8 ms (typ.)) 5 : The logic of input signal is high-active. The DIP-IPM input signal section integrates a 2.5k (min) pull-down resistor. Therefore, when using external filtering resistor, care must be taken to satisfy the turn-on threshold voltage requirement. 6 : To prevent malfunction of protection, the wiring of A, B, C should be as short as possible. 7 : Please set the R1C5 time constant in the range 1.5~2s. 8 : Each capacitor should be located as nearby the pins of the DIP-IPM as possible. 9 : To prevent surge destruction, the wiring between the smoothing capacitor and the P&N1 pins should be as short as possible. Approximately a 0.1~0.22F snubber capacitor between the P&N1 pins is recommended.
CPU UNIT
5V line 15V line
WP
IN
VPC
COM
W
LVIC
UOUT
VN1
VCC C3 VOUT
UN VN WN Fo VNC
UN VN WN Fo GND VNO CIN CFO WOUT
Too long wiring here might cause short-circuit.
N C CFO C4(CFO) C5 CIN B R1
Shunt Resistance
A
Long GND wiring here might generate noise to input and cause IGBT malfunction.
If this wiring is too long, the SC level fluctuation might be larger and cause SC malfunction.
N1
Jul. 2003

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